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Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method

Published in Optics (Volume 7, Issue 1)
Received: 24 June 2018     Accepted: 5 July 2018     Published: 31 July 2018
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Abstract

III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.

Published in Optics (Volume 7, Issue 1)
DOI 10.11648/j.optics.20180701.15
Page(s) 32-37
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2018. Published by Science Publishing Group

Keywords

Photo Emission, Absorption Spectrum, GaN Sample, Finite Difference Time Domain Method

References
[1] S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
[2] S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992), and references therein.
[3] S. Nakamua, S. Peartan, and G. Fasol, The Blue Laser Diode, 2nd edition (Springer, Berlin, 2000).
[4] W. Han, S. Fan, Q. Li, and Y. Hu, Science 277, 1287 (1997).
[5] G. S. Cheng, L. D. Zhang, Y. Zhu, G. T. Fei, L. Li, C. M. Mo, and Y. Q. Mao, Appl. Phys. Lett. 75, 2455 ~1999!; G. S. Cheng, L. D. Zhang, S. H. Chen, Y. Li, L. Li, X. G. Zhu, Y. Zhu, G. T. Fei, and Y. Q. Mao, J. Mater. Res. 15, 347 (2000).
[6] C. C. Tang, S. S. Fan, M. L. de la Chapelle, and P. Li, Chem. Phys. Lett. 333, 12 (2001).
[7] B. O. Dabousi, J. Rodriguez-Viejo, F. M. Midulec, J. R. Heine, H. Mattoussi, R. Ober, K. F. Jensen, and M. G. Bawendi, J. Phys. Chem. B 101, 9463 (1997).
[8] Yee, K., “Numerical solution of initial boundary value problems involving maxwell’s equations in isotropic media,” IEEE Trans. Antennas Propagat., Vol. 14, No. 3, 302–307, 1966.
[9] www.tf.uni-kiel.de
[10] Sze, S. M., Physics of Semiconductor Devices, Wiley, New York, 2nd ed., 1981.
[11] Chopra, K. L., R. C. Kainthla, D. K. Pandya, A. P. Thakoor. Physics of Thin Films, Academic Press: New York. 12 (1982) 169.
[12] Swanepoel R J. Phys. E: Sci. Instrum. 16 (1983) 1214.
[13] F. Abeles and M L Theye, Surf. Sci. 5, 325 (1966).
[14] R. Swanepoel, J. Phys. E 16, 1214 (1983).
[15] R. Swanepoel, J. Phys. E 17, 896 (1984).
[16] J. Szczyrbowski, J. Phys. D 11, 583 (1978).
[17] M. Nowak, Thin Solid Films 254, 200 (1995).
[18] O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter and M. Stutzmann, MIJ-NIR 2, Art. 22 (1997).
[19] S. H. Wemple and J. A. Seman, App. Opt. 12, 2947 (1973).
[20] R. J. Elliott, Phys Rev 108, 1384, 1957.
[21] C. Tanguy, IEEE J. Quantum Electron 32, 1746, (1998).
[22] M. D. Sturge, Phys Rev 127, 768, (1962).
[23] Barker A S Jr 1963 Phys. Rev. 132 1474.
[24] Vadiraj Kalya Tulasidas, “Photoluminescence and applications of Ni:ZnS in photovoltaic cells”, Japanese Journal of Applied Physics 57, 052302 (2018).
[25] Svetlana V. Boriskina, “Efficiency Limits of Solar Energy Harvesting via Internal Photoemission in Carbon Materials”, Photonics 2018, 5, 4; doi: 10. 3390/photonics5010004.
Cite This Article
  • APA Style

    Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. (2018). Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics, 7(1), 32-37. https://doi.org/10.11648/j.optics.20180701.15

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    ACS Style

    Phyoe Sandar Win; Kathy Kyaw Min; Hla Myo Tun; Zaw Min Naing; Win Khaing Moe. Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics. 2018, 7(1), 32-37. doi: 10.11648/j.optics.20180701.15

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    AMA Style

    Phyoe Sandar Win, Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe. Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method. Optics. 2018;7(1):32-37. doi: 10.11648/j.optics.20180701.15

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  • @article{10.11648/j.optics.20180701.15,
      author = {Phyoe Sandar Win and Kathy Kyaw Min and Hla Myo Tun and Zaw Min Naing and Win Khaing Moe},
      title = {Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method},
      journal = {Optics},
      volume = {7},
      number = {1},
      pages = {32-37},
      doi = {10.11648/j.optics.20180701.15},
      url = {https://doi.org/10.11648/j.optics.20180701.15},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.20180701.15},
      abstract = {III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.},
     year = {2018}
    }
    

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  • TY  - JOUR
    T1  - Analysis on Photo Emission and Absorbing Spectrum on GaN Sample by Finite Difference Time Domain Method
    AU  - Phyoe Sandar Win
    AU  - Kathy Kyaw Min
    AU  - Hla Myo Tun
    AU  - Zaw Min Naing
    AU  - Win Khaing Moe
    Y1  - 2018/07/31
    PY  - 2018
    N1  - https://doi.org/10.11648/j.optics.20180701.15
    DO  - 10.11648/j.optics.20180701.15
    T2  - Optics
    JF  - Optics
    JO  - Optics
    SP  - 32
    EP  - 37
    PB  - Science Publishing Group
    SN  - 2328-7810
    UR  - https://doi.org/10.11648/j.optics.20180701.15
    AB  - III-Nitride semiconductors are especially capable for both electronics and optical devices. The capability of the III-Nitride semiconductors as light emitters to extent the electromagnetic spectrum from deep ultraviolet light, throughout the whole visible region, and into the infrared part of the spectrum, is a significant characteristic, making this material indispensable for the areas of light emitting devices. The near and far field characteristics of the GaN samples are studied by affecting the finite-difference time domain (FDTD) technique. The far region spreading characteristics at diverse incident angles are also conferred. In addition, the spreading field would be concentrated and the transmission efficiency could be enhanced by the phase shift caused by the dielectric substrate. The intended of optoelectronic devices fictitious from III-Nitride materials is supported by acquaintance of refractive index and absorption coefficient of these materials.
    VL  - 7
    IS  - 1
    ER  - 

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Author Information
  • Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar

  • Department of Electronic Engineering, Mandalay Technological University, Mandalay, Myanmar

  • Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

  • Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

  • Department of Electronic Engineering, Yangon Technological University, Yangon, Myanmar

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